Growth study of GeTe phase change material using pulsed electron-beam deposition

A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation

Oxygen-doped germanium telluride phase change materials are proposed for high temperature applications. Up to 8 at.% oxygen is readily incorporated into GeTe, causing an increased crystallisation temperature and activation energy. The rhombohedral structure of the GeTe crystal is preserved in the oxygen doped films. For higher oxygen concentrations the material is found to phase separate into G...

Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications

Pulsed Electron-Beam Heating

A pulsed, 20 kv electron beam is focussed upon a vapor-deposited thermocouple, and the resulting temperature vs. time response is studied. The experimental data show much scatter, but are consistent with the theoretical prediction that the characteristic thermal response time T is proportional to d , where d is the beam diameter at the thermocouple. From these data, for the soft-glass substrate...

Graphene processing using electron beam assisted metal deposition and masked chemical vapor deposition growth

The fabrication of graphene devices can be challenging due to exposure to harsh chemicals and mechanical wear such as ultrasonication used for cleaning in photolithography and metal deposition. Common graphene processing methods often damage fragile graphene sheets and can ruin the device during fabrication. The authors report a facile method to overcome many of these challenges, which is speci...

Molecular beam epitaxy of GeTe-Sb2Te3 phase change materials studied by X-ray diffraction

The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te p...